DocumentCode
3555423
Title
Non volatile semiconductor memories
Author
Frohman-Bentchkowsky, Dov
Author_Institution
Intel Israel/The Hebrew University of Jerusalem, Jerusalem, Israel
Volume
27
fYear
1981
fDate
1981
Firstpage
14
Lastpage
17
Abstract
This paper reviews progress in the development of nonvolatile semiconductor memories todate. A comparison of basic device concepts, charge transfer mechanisms and regions of charge transport provides the basis for projection of future trends and limitations, with emphasis on difficulties in research, development and product implementation of new device concepts. Attention is focused on non destructive Program/Erase (P/E) semiconductor devices.
Keywords
Charge transfer; Costs; Dielectric devices; Dielectric substrates; EPROM; MOS devices; Nonvolatile memory; Random access memory; Semiconductor memory; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.189986
Filename
1481939
Link To Document