DocumentCode :
3555440
Title :
Programming mechanism of polysilicon fuse links
Author :
Greve, D.W.
Author_Institution :
Philips Research Laboratories, Sunnyvale, CA
Volume :
27
fYear :
1981
fDate :
1981
Firstpage :
70
Lastpage :
73
Abstract :
We have studied the programming mechanism of polysilicon fuse links using both electrical measurements and microstructure studies with the scanning electron microscope. We find that a gap forms only after a transition to a second breakdown- like state. In this state the current flows mainly through a molten filament. The applied electric field causes drift of positive silicon ions in the filament, forming a gap near the positive contact. A simple electrothermal model is described which gives a good fit to the measured I-V characteristics.
Keywords :
Circuits; Conductivity; Electric breakdown; Fuses; Impedance; Lips; Scanning electron microscopy; Silicon; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Type :
conf
DOI :
10.1109/IEDM.1981.190001
Filename :
1481954
Link To Document :
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