Title :
Programming mechanism of polysilicon fuse links
Author_Institution :
Philips Research Laboratories, Sunnyvale, CA
Abstract :
We have studied the programming mechanism of polysilicon fuse links using both electrical measurements and microstructure studies with the scanning electron microscope. We find that a gap forms only after a transition to a second breakdown- like state. In this state the current flows mainly through a molten filament. The applied electric field causes drift of positive silicon ions in the filament, forming a gap near the positive contact. A simple electrothermal model is described which gives a good fit to the measured I-V characteristics.
Keywords :
Circuits; Conductivity; Electric breakdown; Fuses; Impedance; Lips; Scanning electron microscopy; Silicon; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190001