DocumentCode
3555441
Title
A new failure mechanism in Schottky barrier diodes with Al-Cu-Si metallurgy
Author
Kim, Sang U.
Author_Institution
IBM General Technology Division, Essex Junction, Vermont
Volume
27
fYear
1981
fDate
1981
Firstpage
74
Lastpage
77
Abstract
A new defect responsible for the anomalous leakage current in Al-Cu-Si metallized Schottky Barrier Diode (SBD) has been found. The defect is designated the "CuAl2 /Si defect." The nature of the defect, its formation and leakage inducing attributes are analyzed and established. Process parameter controls to prevent the CuAl2 /Si defect formation are described.
Keywords
Copper; Failure analysis; Leakage current; Low voltage; Metallization; Schottky barriers; Schottky diodes; Silicon; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190002
Filename
1481955
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