A new failure mechanism in Schottky barrier diodes with Al-Cu-Si metallurgy

A new defect responsible for the anomalous leakage current in Al-Cu-Si metallized Schottky Barrier Diode (SBD) has been found. The defect is designated the "CuAl2/Si defect." The nature of the defect, its formation and leakage inducing attributes are analyzed and established. Process parameter controls to prevent the CuAl2/Si defect formation are described.