• DocumentCode
    3555463
  • Title

    Polka dot concentrator cell

  • Author

    Hall, Robert N. ; Soltys, Theodore J.

  • Author_Institution
    General Electric Company, Schenectady, NY
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    142
  • Lastpage
    145
  • Abstract
    The silicon Polka Dot solar cell achieves high efficiency under concentrated illumination by eliminating grid shadow and having low reflection and series resistance losses. Present cells are 2 cm square with the front selectively etched to produce a 60 × 60 array of pyramidal indentations which penetrate through the cell, creating interconnect openings that permit photocurrent collected at the front junction to pass through to metallized electrodes on the back. A cover slip is bonded to the front using a medium which fills the indentations and reduces reflection losses. The back has two sets of interdigitated N+and P+fingers. One set joins the front diffused layer through the interconnect openings, which occupy <1% of the cell area. The other set contacts the interior. Initial cells without AR have achieved 18% efficiency at 10 suns.
  • Keywords
    Bonding; Electrodes; Etching; Fingers; Lighting; Metallization; Photoconductivity; Photovoltaic cells; Reflection; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190022
  • Filename
    1481975