DocumentCode :
3555463
Title :
Polka dot concentrator cell
Author :
Hall, Robert N. ; Soltys, Theodore J.
Author_Institution :
General Electric Company, Schenectady, NY
Volume :
27
fYear :
1981
fDate :
1981
Firstpage :
142
Lastpage :
145
Abstract :
The silicon Polka Dot solar cell achieves high efficiency under concentrated illumination by eliminating grid shadow and having low reflection and series resistance losses. Present cells are 2 cm square with the front selectively etched to produce a 60 × 60 array of pyramidal indentations which penetrate through the cell, creating interconnect openings that permit photocurrent collected at the front junction to pass through to metallized electrodes on the back. A cover slip is bonded to the front using a medium which fills the indentations and reduces reflection losses. The back has two sets of interdigitated N+and P+fingers. One set joins the front diffused layer through the interconnect openings, which occupy <1% of the cell area. The other set contacts the interior. Initial cells without AR have achieved 18% efficiency at 10 suns.
Keywords :
Bonding; Electrodes; Etching; Fingers; Lighting; Metallization; Photoconductivity; Photovoltaic cells; Reflection; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Type :
conf
DOI :
10.1109/IEDM.1981.190022
Filename :
1481975
Link To Document :
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