DocumentCode :
3555469
Title :
Sub-100 ps bulk-recombination-limited InP:Fe photoconductive detector
Author :
Hammond, R.B. ; Paulter, N.G. ; Iverson, A.E. ; Smith, R.C.
Author_Institution :
Los Alamos National Laboratory, Los Alamos, New Mexico
Volume :
27
fYear :
1981
fDate :
1981
Firstpage :
157
Lastpage :
160
Abstract :
We have studied both surface and bulk excited semi-insulating InP optoelectronic switches. We have found that transient recombination in these devices is the same for both types of excitation. We conclude that the recombination is a bulk controlled process.
Keywords :
Conductivity; Electron mobility; Geometry; Indium phosphide; Microstrip; Oscilloscopes; Photoconductivity; Pulse measurements; Radiation detectors; Sampling methods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Type :
conf
DOI :
10.1109/IEDM.1981.190027
Filename :
1481980
Link To Document :
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