Title :
The use of thin epitaxial silicon layers for MOS VLSI
Author :
Yaney, D.S. ; Pearce, C.W. ; Pearce, C.W.
Author_Institution :
Bell Laboratories
Abstract :
The value of p/p+ epitaxial layers (epi) in the fabrication of leakage sensitive NMOS devices has been recognized for some time
Keywords :
Boron; Charge carrier lifetime; Circuits; Fabrication; MOS devices; Photonic band gap; Random access memory; Silicon; Substrates; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190051
