DocumentCode
3555508
Title
Integrated optoelectronic structure
Author
Matsueda, Hideaki ; Nakamura, Michiharu
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
27
fYear
1981
fDate
1981
Firstpage
272
Lastpage
275
Abstract
Structural aspacts of optoelectronic integration is surveyed. The status quo is explained using an example of integration of a laser diode with a twin field effect transistor.
Keywords
Conductivity; Diode lasers; Electron optics; Epitaxial growth; FETs; High speed optical techniques; Integrated optoelectronics; Optical devices; Repeaters; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190062
Filename
1482015
Link To Document