DocumentCode
3555509
Title
An integrated PIN/JFET photoreceiver for long wavelength optical systems
Author
Leheny, R.F. ; Nahory, R.E. ; DeWinter, J.C. ; Martin, R.J. ; Beebe, E.D.
Author_Institution
Bell Laboratories, Holmdel, New Jersey
Volume
27
fYear
1981
fDate
1981
Firstpage
276
Lastpage
279
Abstract
We demonstrate the operation of In0.53 Ga0.47 As integrated PIN/FET devices with transconductance of 60 mS/mm. An analytic model gives a good description of the FET performance characteristics and shows that these devices operate in the regime of electron saturated drift velocity. We also discuss ways of optimizing the PIN and the FET together in the single integrated device.
Keywords
Capacitance; Contacts; Dark current; Electron mobility; FETs; Integrated optics; Optical saturation; Optical sensors; PIN photodiodes; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190063
Filename
1482016
Link To Document