DocumentCode
3555537
Title
A novel buried drain DMOSFET structure
Author
Fichtner, W. ; Cooper, J.A. ; Tretola, A.R. ; Kahng, D.
Author_Institution
Bell Laboratories, Murray Hill, New Jersey
Volume
27
fYear
1981
fDate
1981
Firstpage
363
Lastpage
366
Abstract
A novel buried-drain MOSFET (BDMOS) structure is presented which utilizes a double-implanted source region to achieve short channel lengths. The fabrication sequence of a six-mask silicon-gate process shows the highlights of this new technology. Strong emphasis has been given on using process and device simulation tools in order to optimize device performance. Experimental results on fabricated devices with source-drain distances between 0.5 and 3 µm and active channel lengths of 0.25 µm show the inherent potential of this new structure.
Keywords
Capacitance; Circuit simulation; Complexity theory; Computational modeling; Doping; Fabrication; Ion implantation; MOSFET circuits; Numerical simulation; Size control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190088
Filename
1482041
Link To Document