Title :
A novel buried drain DMOSFET structure
Author :
Fichtner, W. ; Cooper, J.A. ; Tretola, A.R. ; Kahng, D.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
Abstract :
A novel buried-drain MOSFET (BDMOS) structure is presented which utilizes a double-implanted source region to achieve short channel lengths. The fabrication sequence of a six-mask silicon-gate process shows the highlights of this new technology. Strong emphasis has been given on using process and device simulation tools in order to optimize device performance. Experimental results on fabricated devices with source-drain distances between 0.5 and 3 µm and active channel lengths of 0.25 µm show the inherent potential of this new structure.
Keywords :
Capacitance; Circuit simulation; Complexity theory; Computational modeling; Doping; Fabrication; Ion implantation; MOSFET circuits; Numerical simulation; Size control;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190088
