DocumentCode
3555543
Title
A new bird´s-beak free field isolation technology for VLSI devices
Author
Kurosawa, Kei ; Shibata, Tadashi ; Iizuka, Hisakazu
Author_Institution
Toshiba Corporation, Kawasaki, Japan
Volume
27
fYear
1981
fDate
1981
Firstpage
384
Lastpage
387
Abstract
A new field isolation technology ide-- al for VLSI devices has been developed incorporating a unique two step oxide-burying process. This technology is completely free from bird´s beak formation which is particularly important for increasing the packing density. A near-perfect planar surface structure is also obtained. MOS devices fabricated by the new technology showed no thershold voltage increase due to the narrow channel effect for channel widths down to submicron region.
Keywords
Aluminum; Etching; Fabrication; Isolation technology; Oxidation; Plasma applications; Plasma properties; Silicon; Testing; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190094
Filename
1482047
Link To Document