Controlled thyristor turn-on for high DI/DT capability

In a one or more amplified stage thyristor design it is possible to control the peak current level of all but the final stage with impedance built into the p-base zone. This impedance reduces both the current and the duty cycle of the protected amplifying stage effectively protecting it from undesirable temperature rises during turn-on. A further bonus and perhaps equally important is the fact that the amplifying stage and its current control impedance can be used to reduce and essentially fix the voltage level at which the following stage turns on, This results in a lower voltage, lower stress turn-on of the following stage and a device essentially protected from di/dt turn-on failure. This paper describes several aspects of controlled turn-on in the context of a 2.6KV and 5KV light triggered thyristor. In particular we discuss selection of the resistor value, the problem of unwanted current control resistor modulation by device current as well as some factors affecting the proper wattage of such resistors. We also discuss the role current control resistors can play in controlling avalanche current from known locations on the device.