Power MOS transistors for 1000 V blocking voltage

High-voltage MOS transistors with blocking voltages of up to 1000 V and turn-on resistances of less than 2 Ω were developed and tested. The transistor structure itself is that of a vertical SIPMOS⁺(1) power transistor. Retaining this technology, a special design of the cell field and a new type of chip edge construction became necessary in order to achieve the quoted values. The required constructional dimensions were obtained with the aid of a two-dimensional modelling program. (⁺SIPMOS = Siemens Power MOS)