Title :
Low specific on-resistance 400V LDMOST
Author :
Stupp, E.H. ; Colak, S. ; Ni, J.
Author_Institution :
Philips Laboratories, Briarcliff Manor, N.Y.
Abstract :
A readily integratable high voltage lateral DMOS (LDMOST) has been developed which has both as low or lower specific on-resistance and lower input capacitance as compared to the same breakdown voltage vertical transistors. The LDMOST has been designed for a reverse breakdown voltage VDSS= 400V. The active area of the device is 2 mm2and the drift region length is 26µm. The value of RonA for this transistor is 5.6Ω mm2(Ron= 2.8Ω). The fabrication technology is compatible with that used for bipolar and MOS IC fabrication.
Keywords :
Capacitance; Conductivity; Doping; Electrodes; Fabrication; Laboratories; MOSFETs; Predictive models; Solid modeling; Voltage;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190105
