• DocumentCode
    355556
  • Title

    Reduced polarization decay due to electron-hole in-scattering in a semiconductor active medium

  • Author

    Hughes, S. ; Knorr, Andreas ; Koch, S.W. ; Chow, W.W.

  • Author_Institution
    Fachbereich Phys., Philipps-Univ., Marburg, Germany
  • fYear
    1996
  • fDate
    7-7 June 1996
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    Summary form only given. The electron-hole in-scattering processes, which reduce the decay of the active medium polarization, should be included in a consistent treatment of semiconductor laser gain. The in-scattering processes affect the laser gain by decreasing the influence of the high k states, which contribute absorption to the spectrum. A theory, based on the semiconductor-Bloch equations with the effects of carrier-carrier scattering treated at the level of the quantum kinetic equations in the Markov limit, predicts gain spectra that do not exhibit absorption below the renormalized band gap, in agreement with experiment.
  • Keywords
    dielectric polarisation; laser theory; semiconductor lasers; Bloch equation; Markov limit; active medium; carrier-carrier scattering; electron-hole in-scattering; gain spectra; polarization decay; quantum kinetic equation; semiconductor laser; Absorption; Equations; High K dielectric materials; High-K gate dielectrics; Kinetic theory; Laser theory; Particle scattering; Polarization; Quantum mechanics; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
  • Conference_Location
    Anaheim, CA, USA
  • Print_ISBN
    1-55752-444-0
  • Type

    conf

  • Filename
    865707