Title :
Reduced polarization decay due to electron-hole in-scattering in a semiconductor active medium
Author :
Hughes, S. ; Knorr, Andreas ; Koch, S.W. ; Chow, W.W.
Author_Institution :
Fachbereich Phys., Philipps-Univ., Marburg, Germany
Abstract :
Summary form only given. The electron-hole in-scattering processes, which reduce the decay of the active medium polarization, should be included in a consistent treatment of semiconductor laser gain. The in-scattering processes affect the laser gain by decreasing the influence of the high k states, which contribute absorption to the spectrum. A theory, based on the semiconductor-Bloch equations with the effects of carrier-carrier scattering treated at the level of the quantum kinetic equations in the Markov limit, predicts gain spectra that do not exhibit absorption below the renormalized band gap, in agreement with experiment.
Keywords :
dielectric polarisation; laser theory; semiconductor lasers; Bloch equation; Markov limit; active medium; carrier-carrier scattering; electron-hole in-scattering; gain spectra; polarization decay; quantum kinetic equation; semiconductor laser; Absorption; Equations; High K dielectric materials; High-K gate dielectrics; Kinetic theory; Laser theory; Particle scattering; Polarization; Quantum mechanics; Semiconductor lasers;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0