DocumentCode
3555562
Title
High-power single-mode semiconductor diode lasers
Author
Botez, Dan
Author_Institution
RCA Laboratories, Princeton, New Jersey
Volume
27
fYear
1981
fDate
1981
Firstpage
447
Lastpage
451
Abstract
Design principles for high-power single-mode diode lasers are presented with emphasis on the design of constricted double-heterojunction large-optical-cavity (CDH-LOC) devices. In the CDH-LOC structure the lateral geometry allows oscillation in relatively large spots (1.7 µm × 7 µm), while providing strong discrimination against high-order mode operation via "anti-guiding" losses. Thus, operation in a single mode (spatial and longitudinal) is recorded to 40 mW/facet cw, the highest single-mode power ever reported for semiconductor lasers. Under 50% duty-cycle conditions, single spatial mode operation is recorded to 100 mW/facet. The beams have no astigmatism and typical half-power full widths of
. Preliminary room-temperature lifetests at 40 mW/facet initial power and 50% duty-cycle show relatively small changes after 10,000 hours of operation. For comparison, results from other types of high-power single-mode devices are presented and discussed.
. Preliminary room-temperature lifetests at 40 mW/facet initial power and 50% duty-cycle show relatively small changes after 10,000 hours of operation. For comparison, results from other types of high-power single-mode devices are presented and discussed.Keywords
Laser modes; Optical design; Optical devices; Optical losses; Optical recording; Power lasers; Semiconductor diodes; Semiconductor lasers; Signal processing; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190111
Filename
1482064
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