• DocumentCode
    3555562
  • Title

    High-power single-mode semiconductor diode lasers

  • Author

    Botez, Dan

  • Author_Institution
    RCA Laboratories, Princeton, New Jersey
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    447
  • Lastpage
    451
  • Abstract
    Design principles for high-power single-mode diode lasers are presented with emphasis on the design of constricted double-heterojunction large-optical-cavity (CDH-LOC) devices. In the CDH-LOC structure the lateral geometry allows oscillation in relatively large spots (1.7 µm × 7 µm), while providing strong discrimination against high-order mode operation via "anti-guiding" losses. Thus, operation in a single mode (spatial and longitudinal) is recorded to 40 mW/facet cw, the highest single-mode power ever reported for semiconductor lasers. Under 50% duty-cycle conditions, single spatial mode operation is recorded to 100 mW/facet. The beams have no astigmatism and typical half-power full widths of 7\\deg \\times 25\\deg . Preliminary room-temperature lifetests at 40 mW/facet initial power and 50% duty-cycle show relatively small changes after 10,000 hours of operation. For comparison, results from other types of high-power single-mode devices are presented and discussed.
  • Keywords
    Laser modes; Optical design; Optical devices; Optical losses; Optical recording; Power lasers; Semiconductor diodes; Semiconductor lasers; Signal processing; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190111
  • Filename
    1482064