Three terminals AlGaAs/GaAs heterostructure LED

A bipolar transistor type three terminals AlGaAs/GaAs heterostructure LED has been developed to manufacture integrated LED arrays. In this device, light output can be controlled with varying the voltage of control electrode (base) and light was emitted from broad area near the junction region. Typical specifications are: hfe= 20, ft= 130MHz, peak wave length of emitted light = 920nm, optical quantum efficiency = 1.3% and rise time of emitted light = 120nsec. One of the characteristic properties of the device is that light output can be controlled with the voltage of base electrode even if a constant voltage is applied between emitter and collector.