Solid-state color imager using an a-Si:H photoconductive film

A new solid-state color imager using hydrogenated amorphous silicon(a-Si:H) as a photoconductor, is described. The n-MOS FET scanning array has 485(V) × 384(H) scanning elements, each of which measures 23 µm by 13.5 µm. RF sputtered a-Si:H doped with nitrogen is chosen as the photoconductive material to be deposited on top of this scanner. The transparent electrode of ITO and the filter array of RGB checkered pattern are used to obtain a single-chip 2/3" color imager. The fabricated device has a sensitivity of 40 nA/1×(3200 K) and a saturation current of 1.6 DA. The blooming is suppressed for the highlight exposure(50 % spot) up to 250 times as intense as saturation exposure.