Title :
A CCD imaging device having a PLOSS structure
Author :
Terui, Y. ; Yoshino, M. ; Ogura, M. ; Nakayama, M. ; Yoneda, M. ; Kugimiya, K. ; Akiyama, S. ; Chikamura, T. ; Ota, T. ; Miyata, Y. ; Tanaka, H. ; Fujimoto, M. ; Horiuchi, S.
Author_Institution :
Matsushita Electric Ind. Co., Ltd., Osaka, Japan
Abstract :
A half inch size CCD area imaging device having the structure of the Photoconductive-Layer-On-Solid -Scanner(PLOSS) has been designed and fabricated for investigating the capability of applying the very small size image sensor to the compact-video-camera. A buried channel CCD is used as a scanner. A narrow and a short channel effects on the CCD potential well are also evaluated. As a sensor, ZnSe-ZnCdTe photoconductor is employed and vacuum-deposited on the CCD scanner to use the whole area on a Si chip as a photosensitive area. The device is designed for minimum size effect. The experimental device has 375(H) × 482(V) picture elements in the imaging area of 6.4(H) mm × 4.8(V) mm. The maximum handling charge of the CCD register is 1.7 × 105electrons/packet. The saturation signal current is 160 nA. The sensitivity of the device with the IR-cut filter is 0.018 µA/1ux. The SN ratio is above 60 dB(FPN). The blooming phenomenon is suppressed up to 150 times as intense as the saturation exposure within the 10 % smearing signal.
Keywords :
Charge coupled devices; Conductors; Heterojunctions; High-resolution imaging; Image resolution; Image sensors; Photoconducting devices; Potential well; Registers; Solid state circuits;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190123