DocumentCode :
3555589
Title :
E-beam fabrication of bipolar VLSI logic, including a ∼ 5K gate 16-bit I2L microprocessor
Author :
Havemann, R.H. ; Arledge, L.A., Jr. ; Smith, R.L. ; Evans, S.A.
Author_Institution :
Texas Instruments Incorporated, Dallas, Texas
fYear :
1981
fDate :
7-9 Dec. 1981
Firstpage :
528
Lastpage :
531
Abstract :
Direct electron-beam fabrication of 1.25 µm I2L and ISL logic circuits for VLSI is described. The I2L work is highlighted by the SBP9989E, a 55% linearly scaled version of the ∼5K gate, 16-bit SBP9989 microprocessor. The SBP9989E is TTL compatible, has an active area equal to 30% of the full-size chip, and shows a speed improvement of 2X at one-half the power of the full-size SBP9989. ISL ring oscillators exhibited minimum gate delays of 0.55 ns at 50 µA with a fan out of one and 0.62 ns at 70 µA with a fan out of four.
Keywords :
Electron beams; Etching; Fabrication; Lithography; Logic; Microprocessors; Plasma temperature; Resists; Substrates; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1981.190136
Filename :
1482089
Link To Document :
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