Experimental and theoretical results on fine-line p-channel MOSFETs

We report results on p-channel MOSFETs with channel lengths as small as 0.5 µm. Using design criteria obtained from numerical simulation, the devices have been fabricated by a low temperature process with very short annealing times. Fabricated devices with submicron channel lengths are dominated by velocity saturation of holes. Comparing the drive capability of n- and p-channel devices, we find the intrinsic device currents to be within a factor of 1.3 for a channel length of 0.5 µm.