DocumentCode :
355560
Title :
Many-body effects in a semiconductor microcavity laser: Experiment and theory
Author :
Hagerott Crawford, M. ; Choquette, Kent D. ; Chow, W.W. ; Schneider, R.P.
Author_Institution :
Dept. of Semicond. Mater. & Device Res., Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
1996
fDate :
7-7 June 1996
Firstpage :
160
Lastpage :
161
Abstract :
Summary form only given. In this paper, we describe a study of the underlying physical mechanisms governing the threshold properties of a vertical cavity surface emitting laser (VCSEL). In particular, we evaluate the mechanisms that effect the threshold properties as a function of emission wavelength. Other important issues, such as the dependence of the threshold properties on microcavity dimensions, will be discussed.
Keywords :
gallium arsenide; indium compounds; laser cavity resonators; laser theory; many-body problems; quantum well lasers; surface emitting lasers; InGaAs; emission wavelength; many-body effects; microcavity dimensions; physical mechanisms; semiconductor microcavity laser; threshold properties; vertical cavity surface emitting laser; Laser theory; Microcavities; Microscopy; Semiconductor lasers; Solids; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
Type :
conf
Filename :
865711
Link To Document :
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