• DocumentCode
    3555603
  • Title

    Precision registration method for 0.5 µm electron beam lithography

  • Author

    Fujinami, M. ; Shimazu, N. ; Takamoto, K. ; Saitou, N.

  • Author_Institution
    N.T.T., Tokyo, Japan
  • fYear
    1981
  • fDate
    7-9 Dec. 1981
  • Firstpage
    566
  • Lastpage
    569
  • Abstract
    In order to fabricate 0.5 µm rule LSIs, a precision electron beam exposure system, titled EB55, has been developed. A new registration method, that corrects pattern positioning errors derived from wafer warping, was designed for this system, and 0.05 µm stitching accuracy and ±0.1 µm overlay accuracy were attained.
  • Keywords
    Electron beams; Error correction; Fabrication; Laboratories; Large scale integration; Laser beams; Lithography; Scattering; Throughput; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190147
  • Filename
    1482100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555603