• DocumentCode
    3555617
  • Title

    Radiation-hard 16K CMOS/SOS clocked static RAM

  • Author

    Gupta, A. ; Li, M.F. ; Yu, K.K. ; Su, S.C. ; Pandya, P. ; Yang, H.B.

  • Author_Institution
    Hughes Aircraft Company, Newport Beach, California
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    616
  • Lastpage
    619
  • Abstract
    A low-temperature, radiation-hard, 2.21µM channel length, CMOS/SOS process has been developed for a 5V power-supply, 16K clocked static RAM, with a standard six-transistor cell configuration. The well-known edge leakage problem in mesa-isolated N-channel SOS transistors has been eliminated. At VDDof 5V, the 16K RAM has typical access times of 150 nsecs and 110 nsecs with phosphorus doped polysilicon and tantalum silicide gates, respectively; the static power dissipation is 35µW and the operating power is 20 mW at 3 MHz.
  • Keywords
    CMOS process; CMOS technology; Clocks; Conductivity; Electric breakdown; Random access memory; Read-write memory; Silicides; Silicon; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190160
  • Filename
    1482113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555617