Title :
GaAs charge coupled devices for high speed signal processing applications
Author :
Cohen, Marshall J.
Author_Institution :
Rockwell International, Thousand Oaks, California
Abstract :
The use of GaAs Schottky gate charge coupled devices (CCDs) clocking at frequencies from 102MHz to 103MHz in signal processing applications is described. Included are discussions of the device physics which allows GHz clocking frequencies, the current state of the technology, and efforts in progress at Rockwell International to further develop the technology.
Keywords :
Bandwidth; Charge coupled devices; Charge-coupled image sensors; Clocks; Delay lines; Frequency; Gallium arsenide; Signal processing; Surface acoustic wave devices; Surface acoustic waves;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190162
