DocumentCode :
3555620
Title :
Observation of two-dimensional charge transfer in GaAs
Author :
Milano, R.A. ; Liu, Y.Z. ; Anderson, R.J. ; Sovero, E.A. ; Cohen, Marshall J.
Author_Institution :
Rockwell International, Thousand Oaks, California
Volume :
27
fYear :
1981
fDate :
1981
Firstpage :
626
Lastpage :
628
Abstract :
The first observation of two-dimensional (x-y) charge tranfer in a GaAs charge coupled device (CCD) is reported. A 32×32 bit 4-phase CCD array with serial read-in and read-out linear multiplexer CCDs was fabricated using Schottky barrier gate technology. Two dimensional charge transfer was verified by optically generating a charge packet in the array and transferring it to the read-out multiplexer. This result demonstrates the feasibility of designing GaAs CCD arrays for signal processing, memory and imaging applications.
Keywords :
Array signal processing; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Gallium arsenide; Multiplexing; Optical arrays; Optical signal processing; Schottky barriers; Signal design;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Type :
conf
DOI :
10.1109/IEDM.1981.190163
Filename :
1482116
Link To Document :
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