Spatial and temporal constraints on transport in submicron gallium arsenide devices

The purpose of this paper is to demonstrate that peak overshoot effects in gallium arsenide are reduced when the fields change temporally and spatially at a finite rate. For temporal changes and uniform fields the peak overshoot velocity is shown to be sensitive to bias rise times. For spatial changes the mean carrier velocity is extremely sensitive to gradients, and while overshoot can occur it is also below the peak uniform field value.