• DocumentCode
    3555623
  • Title

    In0.53Ga0.47As/Si3N4n-channel and p-channel inversion mode MISFET´s

  • Author

    Liao, A.S.H. ; Leheny, R.F. ; Nahory, R.E. ; DeWinter, J.C. ; Martin, R.J.

  • Author_Institution
    Bell Laboratories, Holmdel, New Jersey
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    637
  • Lastpage
    640
  • Abstract
    We describe the operation of both n-channel and p-channel Si3N4insulated gate In0.53Ga0.47As inversion mode MISFET´s. These devices exhibit a maximum transconductance of 4mS/mm which represents a significant improvement over previously reported In0.53Ga0.47As MISFET results.
  • Keywords
    Contact resistance; Electron mobility; FETs; Indium phosphide; Insulation; MISFETs; Plasma temperature; Semiconductor films; Semiconductor materials; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190166
  • Filename
    1482119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555623