Electron drift velocities in In0.53Ga0.47As at very high electric fields

Electron drift velocities in GaAs and in In0.53Ga0.47As have been experimentally determined using a microwave time-of-flight technique. Drift velocities in GaAs have been measured at temperatures from 95 K to 385 K for electric field strengths in excess of 160 kV/cm at most temperatures and as high as 236 kV/cm at 300 K. Measurements of electron drift velocities at various temperatures in In0.53Ga0.47As for field strengths of up to 150 kV/cm show a larger negative differential mobility, higher peak to valley ratio, and lower saturation velocity than is obtained with GaAs.