DocumentCode :
3555629
Title :
Elimination of hot electron gate current by the lightly doped drain-source structure
Author :
Ogura, Seiki ; Tsang, Paul J. ; Walker, William W. ; Critchlow, Dale L. ; Shepard, Joseph F.
Author_Institution :
IBM General Technology Division, Hopewell Junction, New York
Volume :
27
fYear :
1981
fDate :
1981
Firstpage :
651
Lastpage :
654
Abstract :
In the LDD structure, narrow self-aligned n-regions are added between the channel and the source/drain of a conventional FET. The resulting device suffers less from high electric field effects than a conventional FET. In particular, it is shown through computer simulations and experimental data that the degradation of device characteristics, due to hot electron injection into the gate insulator, is rendered insignificant by the LDD structure. Consequently a higher operating voltage and/or shorter channel length may be utilized to improve the performance of circuits design with LDD FET´s.
Keywords :
Channel hot electron injection; Computer simulation; Degradation; Delta modulation; Dynamic voltage scaling; FETs; Implants; Insulation; Power supplies; Secondary generated hot electron injection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Type :
conf
DOI :
10.1109/IEDM.1981.190171
Filename :
1482124
Link To Document :
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