DocumentCode
3555635
Title
High efficiency high power X-band GaAs FETs
Author
Zemack, D. ; Rosenheck, L. ; Thompson, J. ; Drukier, I.
Author_Institution
Microwave Semiconductor Corporation, Somerset, New Jersey
Volume
27
fYear
1981
fDate
1981
Firstpage
672
Lastpage
675
Abstract
Internally matched, hermetically sealed, high efficiency GaAs power FET development is described. The design performance and operating conditions were aimed for potential use in high reliability spacecraft power amplifiers operating between 7.2 and 8.5GHz. Power-added efficiencies above 42% were recorded at 8.5GHz for 1 watt and 2 watt devices, and 41% for a dual pellet 4 watt device.
Keywords
Buffer layers; Ceramics; Cutoff frequency; FETs; Gallium arsenide; Grounding; Metallization; Ohmic contacts; Packaging; Seals;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1981 International
Type
conf
DOI
10.1109/IEDM.1981.190177
Filename
1482130
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