Title :
High efficiency high power X-band GaAs FETs
Author :
Zemack, D. ; Rosenheck, L. ; Thompson, J. ; Drukier, I.
Author_Institution :
Microwave Semiconductor Corporation, Somerset, New Jersey
Abstract :
Internally matched, hermetically sealed, high efficiency GaAs power FET development is described. The design performance and operating conditions were aimed for potential use in high reliability spacecraft power amplifiers operating between 7.2 and 8.5GHz. Power-added efficiencies above 42% were recorded at 8.5GHz for 1 watt and 2 watt devices, and 41% for a dual pellet 4 watt device.
Keywords :
Buffer layers; Ceramics; Cutoff frequency; FETs; Gallium arsenide; Grounding; Metallization; Ohmic contacts; Packaging; Seals;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190177
