Title :
GaAs beam lead antiparallel diodes for mm wave subharmonic mixers
Author :
Anderson, G.F. ; Chang, C.C. ; Lynch, D.G. ; Matreci, R.J. ; David, F.K. ; Roberts, G.I.
Author_Institution :
Hewlett-Packard Company, Santa Rosa, California
Abstract :
Monolithic GaAs beam lead antiparallel pair Schottky diodes have been developed for use as subharmonic mixers at mm wave frequencies. These diodes were designed for minimum parasitic capacitance, low parasitic inductance, and ease in circuit mounting. This paper will cover details of device fabrication, and give calculated and experimental results of the diode performance in K, Ka, and U bands (18-60 GHz).
Keywords :
Circuits; Fabrication; Gallium arsenide; Gold; Inductance; Parasitic capacitance; Passivation; Polyimides; Schottky barriers; Schottky diodes;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190181
