DocumentCode :
3555646
Title :
An EAROM cell with a stacked gate and a single diffused layer
Author :
Takei, Akira ; Hika, Yoshihiko ; Miida, Takashi
Author_Institution :
Fujitsu Limited, Kawasaki, Japan
Volume :
27
fYear :
1981
fDate :
1981
Firstpage :
704
Lastpage :
705
Keywords :
Avalanche breakdown; Character generation; EPROM; Electrons; Flip-flops; Silicon; Space vector pulse width modulation; Threshold voltage; Tunneling; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1981 International
Type :
conf
DOI :
10.1109/IEDM.1981.190187
Filename :
1482140
Link To Document :
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