Title :
Time-resolved optical investigation of spatially indirect excitons in GaAs/GaSb quantum dots
Author :
Wang, Guibin ; Sun, Chi-Kuang ; Blank, H.R. ; Brar, B. ; Bowers, John E. ; Kroemer, H. ; Pilkuhn, M.H.
Author_Institution :
Centre for Quantized Electron. Structure, California Univ., Santa Barbara, CA, USA
Abstract :
Summary form only given. Self-organized quantum dots formed under Stranski-Krastanav growth has been an active area of quantum structure research. Traditional quantum dots grown with III-V materials usually have a normal band lineup, where the electron and hole are confined within the dot, and spatially direct excitons are observed in these structures. Highly strained material systems such as GaSb/GaAs exhibit a staggered band lineup, where electrons and holes are spatially separated. In this paper, we report on the time-resolved optics characterizations of spatially indirect excitons in GaSb-GaAs quantum dots.
Keywords :
III-V semiconductors; excitons; gallium arsenide; gallium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; time resolved spectra; GaAs/GaSb quantum dots; GaSb-GaAs; GaSb-GaAs quantum dots; highly strained material systems; normal band lineup; self-organized quantum dots; spatially direct excitons; spatially indirect exciton; spatially indirect excitons; spatially separated; staggered band lineup; time-resolved optical investigation; time-resolved optics characterizations; Atomic force microscopy; Charge carrier processes; Excitons; Gallium arsenide; III-V semiconductor materials; Molecular beam epitaxial growth; Optical superlattices; Photoluminescence; Quantum dots; US Department of Transportation;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
