Title :
Reduction of interface state density in MNOS capacitors by Hydrogen implantation
Author_Institution :
Naval Research Laboratory, Washington, D.C.
Keywords :
Annealing; Capacitance; Hafnium; Hydrogen; Interface states; Laboratories; MOS capacitors; Nitrogen; Silicon; Temperature;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190191
