Crystal silicon quantum layers

Author

Saeta, P.N. ; Gallagher, Andrew

Author_Institution

Dept. of Phys., Harvey Mudd Coll., Claremont, CA, USA

fYear

1996

fDate

7-7 June 1996

Firstpage

165

Abstract

Summary form only given. We have prepared thin c-Si layers surrounded by thermal oxide from SIMOX substrates and from crystallized a-Si:H layers grown by plasma-enhanced chemical vapor deposition of silane. These latter layers were crystallized by annealing to 1000 C in flowing Ar. This produces device-quality Si-SiO/sub 2/ interfaces with low defect densities. The thickness of the layers was determined from reflection spectra. The photoluminescence (PL) behavior of the layers was investigated with nm cw excitation which produced the same broad spectrum peaked in the near infrared between 750 and 780 nm.

Keywords

crystallisation; hydrogen; infrared spectra; optical fabrication; photoluminescence; plasma CVD; reflectivity; semiconductor quantum wells; silicon compounds; 1000 C; 1000 to 1100 C; 488 nm; 750 to 780 nm; Ar; SIMOX substrates; Si; Si-SiO/sub 2/; Si:H; annealing; broad spectrum peak; c-Si layers; crystal silicon quantum layers; crystallized a-Si:H layers; device-quality Si-SiO/sub 2/ interfaces; flowing Ar; low defect densities; near infrared spectra; nm cw excitation; photoluminescence; plasma-enhanced chemical vapor deposition; reflection spectra; silane; thermal oxide; Annealing; Argon; Chemical vapor deposition; Crystallization; Photoluminescence; Plasma chemistry; Plasma density; Plasma devices; Reflection; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865717