DocumentCode :
3555718
Title :
Integrated power devices
Author :
Tihanyi, J.
Author_Institution :
Siemens AG, Munich, Germany
Volume :
28
fYear :
1982
fDate :
1982
Firstpage :
6
Lastpage :
10
Abstract :
One of the two main trends in the power integration is the combination of logic functions with high voltage output stages resulting in complex HVIC chips which are mainly used for display driving and telecommunication applications. The other trend is to build high current high voltage structures with integrated additional functions making the power devices better compatible to normal IC´s and microcomputers.
Keywords :
Electric breakdown; Insulation; Ion implantation; Logic devices; Low voltage; MOS devices; P-n junctions; Space charge; Switches; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Type :
conf
DOI :
10.1109/IEDM.1982.190196
Filename :
1482730
Link To Document :
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