DocumentCode :
3555744
Title :
A 200V complementary vertical bipolar process with compatible logic
Author :
Beasom, James D.
Author_Institution :
Harris Semiconductor, Melbourne, Florida
Volume :
28
fYear :
1982
fDate :
1982
Firstpage :
89
Lastpage :
91
Abstract :
A 200V BVCBOcomplementary vertical bipolar process utilizing dielectric isolation is described. The process is designed for telecommunications applications. Compatible I2L gates achieve a propagation delay of 180ns. Structure and characteristics of 200V NJFET´s and SCR´s which can be made with the process are described.
Keywords :
Circuit testing; Dielectric substrates; Electric breakdown; JFETs; Logic; Process design; Propagation delay; Switches; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Type :
conf
DOI :
10.1109/IEDM.1982.190220
Filename :
1482754
Link To Document :
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