Title :
A 200V complementary vertical bipolar process with compatible logic
Author :
Beasom, James D.
Author_Institution :
Harris Semiconductor, Melbourne, Florida
Abstract :
A 200V BVCBOcomplementary vertical bipolar process utilizing dielectric isolation is described. The process is designed for telecommunications applications. Compatible I2L gates achieve a propagation delay of 180ns. Structure and characteristics of 200V NJFET´s and SCR´s which can be made with the process are described.
Keywords :
Circuit testing; Dielectric substrates; Electric breakdown; JFETs; Logic; Process design; Propagation delay; Switches; Thyristors; Voltage;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190220
