Title :
The effect of thin gate dielectrics on scaling MOS devices
Author :
Sodini, C.G. ; Moll, J.L.
Author_Institution :
Hewlett Packard, Inc., Palo Alto, CA
Keywords :
Capacitance; Dielectric devices; Dielectric substrates; Equations; Integrated circuit synthesis; Laboratories; MOS devices; Power supplies; Semiconductor device doping; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190224
