DocumentCode :
3555753
Title :
A novel BBD structure for low voltage operation
Author :
Itoh, M. ; Shikata, M. ; Gobara, T. ; Kimura, T. ; Oishi, H. ; Arita, S.
Author_Institution :
Matsushita Electronics Corporation, Kyoto, Japan
Volume :
28
fYear :
1982
fDate :
1982
Firstpage :
119
Lastpage :
122
Abstract :
A new MOS BBD which can operate at extremely low voltage has been realized. A novel pentode MOS structure, having three overlapping gates, has been developed by introducing double poly-Silicon process. Making potential gradient along the channel length and excluding the stray capacitance, high transconductance and low channel length modulation are simultaneously obtained, and as a result, the transfer inefficiency is decreased. Consequently, the transfer inefficiency of 
has been obtained even at 1.5V supply and 40kHz clock.
has been obtained even at 1.5V supply and 40kHz clock.Keywords :
Capacitance; Charge transfer; Clocks; Equations; Feedback; Frequency; Impedance; Low voltage; MOSFETs; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1982 International
Type :
conf
DOI :
10.1109/IEDM.1982.190228
Filename :
1482762
Link To Document :
