Study on increasing the surge capability of a lightning surge protection semiconductor device

Author

Satoh, Hidetaka

Author_Institution

NTT Appl. Electron. Lab., Tokyo, Japan

fYear

1991

fDate

12-16 Aug 1991

Firstpage

469

Lastpage

473

Abstract

Design techniques for increasing the surge capability of a bidirectional SCR (silicon controlled rectifier) lightning surge protection device for communications equipment are described. The relationships between surge capability and doping profiles with different p-base widths and n-base impurity concentrations are studied by analyzing failure modes and surge response characteristics. A narrow p-base width is effective for increasing surge capability because it can reduce turn-on energy dissipation that leads to hot-spot failure. Furthermore, reducing the on-state energy dissipation can increase surge capability without increasing device size

Keywords

lightning protection; surge protection; thyristors; bidirectional SCR; communications equipment; design; doping profiles; failure modes; hot-spot failure; lightning surge protection; n-base impurity concentrations; p-base widths; semiconductor device; silicon controlled rectifier; surge response characteristics; turn-on energy dissipation; Communication equipment; Doping profiles; Failure analysis; Lightning; Propagation losses; Semiconductor devices; Surge protection; Surges; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 1991. Symposium Record., IEEE 1991 International Symposium on

Conference_Location

Cherry Hill, NJ

Print_ISBN

0-7803-0158-7

Type

conf

DOI

10.1109/ISEMC.1991.148278

Filename

148278