DocumentCode
3555799
Title
The insulated gate rectifier (IGR): A new power switching device
Author
Baliga, B.J. ; Adler, M.S. ; Gray, P.V. ; Love, R.P. ; Zommer, Nathan
Author_Institution
General Electric Company, Schenectady, NY
Volume
28
fYear
1982
fDate
1982
Firstpage
264
Lastpage
267
Abstract
A new power semiconductor device called the Insulated Gate Rectifier (IGR) is described in this paper. This device has the advantages of operating at high current densities while requiring low gate drive power. The devices exhibit relatively slow switching speeds due to bipolar operation. The results of two dimensional computer modelling of the device structure are compared with measurements taken on devices fabricated with 600 volt forward and reverse blocking capability.
Keywords
Anodes; Bipolar transistors; Cathodes; Current density; Dielectrics and electrical insulation; Electrons; MOSFETs; Power semiconductor switches; Rectifiers; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190269
Filename
1482803
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