Title :
The insulated gate rectifier (IGR): A new power switching device
Author :
Baliga, B.J. ; Adler, M.S. ; Gray, P.V. ; Love, R.P. ; Zommer, Nathan
Author_Institution :
General Electric Company, Schenectady, NY
Abstract :
A new power semiconductor device called the Insulated Gate Rectifier (IGR) is described in this paper. This device has the advantages of operating at high current densities while requiring low gate drive power. The devices exhibit relatively slow switching speeds due to bipolar operation. The results of two dimensional computer modelling of the device structure are compared with measurements taken on devices fabricated with 600 volt forward and reverse blocking capability.
Keywords :
Anodes; Bipolar transistors; Cathodes; Current density; Dielectrics and electrical insulation; Electrons; MOSFETs; Power semiconductor switches; Rectifiers; Thyristors;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190269
