DocumentCode
3555814
Title
A monolithic pressure-pH sensor for esophageal studies
Author
Huang, J.C.-M. ; Wise, K.D.
Author_Institution
University of Michigan, Ann Arbor, Michigan
Volume
28
fYear
1982
fDate
1982
Firstpage
316
Lastpage
319
Abstract
This paper describes a single-chip sensor which has been developed to allow the diagnosis of esophageal abnormalities in the ambulatory patient. The chip consists of a capacitive pressure transducer and an ion-sensitive field-effect transistor (ISFET). The pressure transducer uses a boron etch-stopped diaphragm and a batch fabricated lead transfer. The pressure sensitivity is about 1000 ppm/mmHg with a temperature sensitivity of +30 ppm/°C. The ISFET has a pH sensitivity of about 50 mV/pH with a temperature coefficient of about 0.015 pH/°C. These temperature sensitivities are low enough that individual temperature trims of the transducers are eliminated in this application, even though temperature excursions of 30°C can occur simultaneously with pressure and pH changes during swallowing. The chip is compatible with use in a 3 mm OD catheter.
Keywords
Boron; Catheters; Circuits; Clocks; Esophagus; Etching; Semiconductor device measurement; Sensor phenomena and characterization; Temperature sensors; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190283
Filename
1482817
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