Title :
Superlattice, graded band gap, channeling and staircase avalanche photodiodes towards a solid-state photomultiplier
Author :
Capasso, F. ; Tsang, W.T.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
Abstract :
Recent results on a new class of low excess noise avalanche photodiodes (APDs) are discussed. A significant enhancement of the ionization rates ratio has been demonstrated in AlGaAs/GaAs superlattice and graded gap APDs. In addition two novel APDs where only electrons multiply (channeling and staircase APDs) have been disclosed. The staircase APD has lower bias voltage (5-10V) than conventional APDs and virtually noise-free multiplication similarly to a phototube.
Keywords :
Avalanche photodiodes; Electrons; Gallium arsenide; Ionization; Photoelectricity; Photomultipliers; Photonic band gap; Solid state circuits; Superlattices; Voltage;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190288