A gain-guided-stripe diode laser with a single longitudinal mode, high kink power, and minimal beam distortion

Based on organometallic vapor phase epitaxy (OMVPE), a technologically simple 8 µm proton-stripe GaAlAs double-heterostructure (DH) laser was designed for single-mode high-output-power operation. The device features a thin active layer (TAL) of ∼0.05 µm and thus exhibits low vertical mode confinement ( ) which diminishes the tendency for hole burning (1) in the lateral as well as longitudinal gain profile. Relatively high kink power level and even single longitudinal mode oscillation are obtained. An asymmetric facet coating (3λ/4 - λ/2 Al2O3) further improves the high-power performance of the TAL laser raising the kink power to levels as high as 50 mW cw. Additionally, high cw burnout power (up to 150 mW) is achieved (2). Thus, high reliability at a 30 mW cw operating power is expected with preliminary aging tests establishing about 2100 h median life at 40 mW cw and 25°C.