Title :
Characteristics of MOS devices in electron beam-recrystallized silicon on insulator
Author :
Ohmura, Y. ; Shibata, K. ; Inoue, T. ; Yoshii, T. ; Horiike, Y. ; Horiike, Y.
Author_Institution :
Toshiba R & D Center, Kawasaki, Japan
Abstract :
N-channel MOS devices have been fabricated in an electron beam-recrystallized silicon film on a Si3N4/SiO2/
Keywords :
Annealing; Electron beams; MOS devices; MOSFETs; Optical films; Ring oscillators; Rough surfaces; Semiconductor films; Silicon on insulator technology; Surface roughness;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190316
