• DocumentCode
    3555851
  • Title

    Characterization of laser-SOI double Si active layers by fabricating elementary device structures

  • Author

    Warabisako, T. ; Miyao, M. ; Ohkura, M. ; Tokuyama, T.

  • Author_Institution
    Hitachi Ltd., Kokubunji, Tokyo, Japan
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    433
  • Lastpage
    436
  • Abstract
    Various active regions in a silicon-on-insulator (SOI) structure, prepared by seeded lateral-epitaxy using a scanned cw-Ar laser, are characterized by fabricating MOSFETs and diodes. The MOSFETs on both sides of the SOI layer exhibit a channel mobility of higher than 600cm2/V.s. The p-n diodes in the seeding area show a forward current with an ideality factor of 1.2-1.4 and a reverse current level of 6x 10-8A/cm2at 0.1V. A novel device structure is also presented where the diode forward current is controlled by a MOS gate.
  • Keywords
    Argon; Crystallization; Diodes; Epitaxial growth; FETs; Grain size; Laboratories; MOSFETs; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190317
  • Filename
    1482851
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555851