Characterization of laser-SOI double Si active layers by fabricating elementary device structures

Various active regions in a silicon-on-insulator (SOI) structure, prepared by seeded lateral-epitaxy using a scanned cw-Ar laser, are characterized by fabricating MOSFETs and diodes. The MOSFETs on both sides of the SOI layer exhibit a channel mobility of higher than 600cm²/V.s. The p-n diodes in the seeding area show a forward current with an ideality factor of 1.2-1.4 and a reverse current level of 6x 10^-8A/cm²at 0.1V. A novel device structure is also presented where the diode forward current is controlled by a MOS gate.