Molybdenum film properties for submicron VLSI

Three Key technologies for Mo application to submicron MOS LSI have been studied: film resistivity; Mo reaction with and diffusion into gate SiO2; and selective SiO2formation on the Mo surface. It became clear that the depth of the Mo reaction with and diffusion into SiO2was less than about 30 Å. As new methods for forming a SiO2layer on a Mo electrode, oxidation of a poly Si/Mo structure and hydrogen reduction of a poly Si/MoO2/Mo structure are proposed.