Title :
Influence of an external mechanical force on light emission from strained 1.3 /spl mu/m semiconductor lasers: polarization switching and mode spectra
Author :
Klehr, Andreas ; Muller, Rudolf ; Enders, P.
Author_Institution :
Max-Born-Inst., Berlin, Germany
Abstract :
Summary form only given. We study the dependence of the light power current characteristics and the spectra on strain of 1.3-/spl mu/m ridge waveguide InGaAsP-InP lasers. The polarization of light from strained semiconductor lasers can switch between TE and TM polarization in dependence on the strain in the active layer and the injection current.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; light polarisation; optical switches; ridge waveguides; semiconductor lasers; semiconductor switches; waveguide lasers; /spl mu/m ridge waveguide InGaAsP-InP lasers; 1.3 mum; InGaAsP-InP; TE polarization; TM polarization; active layer strain; external mechanical force; injection current; light emission; light power current characteristics; mode spectra; polarization switching; strained 1.3 /spl mu/m semiconductor lasers; strained semiconductor lasers; Electrons; Kinetic energy; Laser modes; Optical polarization; Optical scattering; Phonons; Quantum cascade lasers; Semiconductor lasers; Temperature dependence; Temperature distribution;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
