• DocumentCode
    3555906
  • Title

    A subthreshold load element for high density static RAM

  • Author

    Wang, K.L. ; Shah, A.H. ; Shichijo, H. ; Gosmeyer, C. ; Chatterjee, P.K.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Texas
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    628
  • Lastpage
    631
  • Abstract
    A MOSFET biased in the subthreshold region is discussed as a simple means of realizing a high impedance load (100 Mohm - 50 Gohm) for NMOS sRAMs. The MOSFET is connected like a depletion load (Vgs= 0 V), but has a positive threshold (0.2-0.3 V). Short-channel and narrow-width effects and temperature effects on the subthreshold load characteristics were studied with two-dimensional models and characterized experimentally. Feasibility of the subthreshold load has been demonstrated.
  • Keywords
    Current measurement; Doping; Implants; Inverters; Leakage current; Low voltage; Semiconductor process modeling; Subthreshold current; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190371
  • Filename
    1482905
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555906