Title :
A complete large and small signal charge model for an M.O.S. transistor
Author :
Conilogue, Randall ; Viswanathan, Chand
Author_Institution :
University of California, Los Angeles, California
Abstract :
A complete large and small-signal, quasi-static, charge model for the MOS enhancement transistor is developed. An approximate method based upon a perturbation technique is used to solve for the large-signal, quasi-static, stored carrier charge associated with each individual terminal of the transistor. A comparison is made between the measured inter-electrode capacitances and the values predicted by the model to test the model.
Keywords :
Aircraft propulsion; Capacitance measurement; Charge carrier processes; Electron mobility; Equations; MOSFET circuits; Missiles; Perturbation methods; Predictive models; Voltage;
Conference_Titel :
Electron Devices Meeting, 1982 International
DOI :
10.1109/IEDM.1982.190378
